This paper is published in Volume 3, Issue 3, 2018
Area
Electronics and Communication
Author
Neeraj Jain
Co-authors
Rishabh Gupta, Akash Tomar, Himanshu Giri
Org/Univ
IMS Engineering College, Ghaziabad, Uttar Pradesh, India
Pub. Date
20 March, 2018
Paper ID
V3I3-1195
Publisher
IJARnD
Edition
Volume 3, Issue 3, 2018
Keywords
Silvaco Tcad , DG-SOI, SG-SOI

Citationsacebook

IEEE
Neeraj Jain, Rishabh Gupta, Akash Tomar, Himanshu Giri. Analysis and Performance Evaluation of Nano-Scale Semiconductor Devices, International Journal of Advance Research, Ideas and Innovations in Technology, www.IJARnD.com.

APA
Neeraj Jain, Rishabh Gupta, Akash Tomar, Himanshu Giri (2018). Analysis and Performance Evaluation of Nano-Scale Semiconductor Devices. International Journal of Advance Research, Ideas and Innovations in Technology, 3(3) www.IJARnD.com.

MLA
Neeraj Jain, Rishabh Gupta, Akash Tomar, Himanshu Giri. "Analysis and Performance Evaluation of Nano-Scale Semiconductor Devices." International Journal of Advance Research, Ideas and Innovations in Technology 3.3 (2018). www.IJARnD.com.

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Abstract

The current work in this paper deals with the analysis and comparison of single gate silicon on insulator (SG-SOI) MOSFET and double gate silicon on insulator (DG-SOI) MOSFET. Both the devices have 20nm Fin width and channel length of 50nm. The quantitative analysis of these nanoscale gate devices and comparison between their parameters such as Subthreshold Slope(SS), Threshold voltage(Vt), transconductance(gm), output conductance(gd). This resulted in reduction of short channel effects(SCE’s) in the double gate MOSFET. The simulation of both the devices is done using ATLAS Simulator is SILVACO TCAD.

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